| 摘要 |
<p>A nonvolatile semiconductor storage apparatus and a method for manufacturing the same is provided to reduce a plurality of processes by forming a memory cell with three dimensional lamination structure. A nonvolatile semiconductor memory(1) comprises a memory transistor region(2), a word-line driving circuit(3), a source side select gate line SGS driver circuit(4), a drain section SGS driver circuit(5), a sense amplifier, a word line WL(7), a bit line(8), a source side select gate line SGS(30), and a drain section SGS(31). The memory transistor is integrated by laminating a plurality of semiconductor layers in each other the memory transistor comprising the memory transistor region. The word line of each layer is distributed at two dimension in the memory transistor region, and the end of the word line of one end meeting at right angle is bent in the bit line about substrate to upside. The end of the bent word line is planarized with the CMP(Chemical Mechanical Polishing) process.</p> |
