发明名称 TRANSISTOR-BASED SHF GENERATOR
摘要 FIELD: electrical engineering. ^ SUBSTANCE: invention relates to electronic engineering and, particular, to semi-conducting SHF instruments based generators with frequency stabilisation. SHF generator in accordance with the invention comprises a unipolar transistor with Schottky barrier-like gate and dielectric resonator with or without electrical frequency tuning by means of the second unipolar transistor with voltage-controlled Schottky barrier-like gate. SHF generator is realised as solid integral diagram on the front surface of semi-conducting material crystal. In addition, the semi-conducting material crystal with solid integral diagram is situated on the opposite side of dielectric resonator. ^ EFFECT: wide range of frequency tuning, increase output SHF power, reduced dimensions. ^ 4 cl, 4 dwg
申请公布号 RU2353048(C1) 申请公布日期 2009.04.20
申请号 RU20070135455 申请日期 2007.09.24
申请人 FEDERAL'NOE GOSUDARSTVENNOE UNITARNOE PREDPRIJATIE "NAUCHNO-PROIZVODSTVENNOE PREDPRIJATIE "ISTOK" (FGUP NPP "ISTOK") 发明人 BALYKO ALEKSANDR KARPOVICH;KOROLEV ALEKSANDR NIKOLAEVICH;MAL'TSEV VALENTIN ALEKSEEVICH;MJAKIN'KOV VITALIJ JUR'EVICH
分类号 H03B7/14 主分类号 H03B7/14
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