| 摘要 |
<p>A method for manufacturing a phase change memory device is provided to prevent the deterioration of interfacial property between the thin film and the phase change material layer by protecting tellurium(Te) on a phase change material layer surface. A phase change material layer is made of a chalcogenides, and is made of the germanium - antimony - tellurium(Ge-Sb-Te, GST). A hard mask pattern(24) is formed on the top of the phase change material layer, and is made of the conductive film, such as the TiN film. The hard mask pattern is used as the upper electrode of the phase change memory device, and the phase change material layer pattern(23A) is formed by etching the phase change material layer. A photoresist is coated on the front of the result from the phase change material pattern. A buffer layer(25) is formed on the side wall of the phase change material layer pattern by processing the exposure process and the developing process.</p> |
