| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent a bit line from being fallen down by reducing resistance of the bit line without increasing the height of the bit line. An element isolation film(110) is formed at a predetermined region of a semiconductor substrate(100). A gate insulating layer(120), a gate conductive film(130) and a gate hard mask membrane(140) are successively laminated on the fixed region of the semiconductor substrate. A first interlayer insulating film(160) is formed on the entire structure, and a first photoresist film is formed on the entire structure. A second inter metal dielectric(190) is formed on the top of the overall structure, and a second photosensitive film is coated onto on the top of the second inter metal dielectric. A spacer(260) is formed on an inner sidewall of a storage node contact hole, and a storage node contact plug(270) is formed by forming the conductive layer.
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