| 摘要 |
A method for fabricating a semiconductor device is provided to prevent lifting of a gate hard mask and abnormal oxidation due to the exposure of the tungsten electrode by reducing etching rate of a photosensitive. An etched layer is formed on the top of a substrate(21), and the etched layer is formed with the laminating structure of a nitride film and an oxide film or the oxide film. A photosensitive pattern(23) is formed on the etched layer, and the photosensitive film pattern is formed by patterning the photosensitive film coated on the etched layer. The etched layer is etched by using a mixed gas including CHF3 and is etched by using CF4, O2, and the mixed gas of CHF3 and Ar. The loss of the photosensitive pattern is decreased by reducing the amount of O2 and adding CHF3.
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