| 发明名称 |
Method for forming a strained transistor by stress memorization based on stressed implantation mask |
| 摘要 |
By using an implantation mask having a high intrinsic stress, stress memorization technique (SMT) sequences may be provided in which additional lithography steps may be avoided. Consequently, a strain source may be provided without significantly contributing to the overall process complexity. |
| 申请公布号 |
GB2453494(A) |
申请公布日期 |
2009.04.08 |
| 申请号 |
GB20090001657 |
申请日期 |
2007.07.24 |
| 申请人 |
ADVANCED MICRO DEVICES, INC |
发明人 |
FRANK WIRBELEIT;ROMAN BOSCHKE;MARTIN GERHARDT |
| 分类号 |
H01L21/8238;H01L21/265;H01L21/324 |
主分类号 |
H01L21/8238 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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