| 摘要 |
By forming a semiconductor alloy (107, 107A, 107B, 207A, 207B, 307) in a silicon-based active semiconductor region prior to the gate patterning, material characteristics of the semiconductor alloy itself may also be exploited in addition to the strain-inducing effect thereof. Consequently, device performance of advanced field effect transistors may be even further enhanced compared to conventional approaches using a strained semiconductor alloy in the drain and source regions. |
