| 摘要 |
<p>A switching circuit (100) for preventing malfunction of a switching device formed of a wide band-gap semiconductor used for switching a high-power main power supply includes a normally-off type FET (130) having a gate electrode, a source electrode connected to the ground, and a drain electrode connected to a power supply potential Vdd, and a normally-on type FET (132) having drain and source electrodes connected to the gate and source electrodes of the FET (130), respectively, and a gate electrode. In the absence of any power supply, the normally-on type FET (132) turns on. As a result, the gate/source potential of FET (130) attains to 0V, and FET (130) is kept off.</p> |
