发明名称 SEMICONDUCTOR DEVICE AND METHOD OF BUMP FORMATION
摘要 A method of forming the bump and semiconductor device can contact a part of the side surface of the bump to the seed layer and prevent the seed layer from being over-etched. The semiconductor substrate comprises the active surface. The contact pad(120) is arranged on the active surface. The passivation layer is arranged on the active surface and exposes the central part(122) of the contact pad. The seed layer(150) is arranged on the exposed central part of the contact pad. The bump(140) is arranged on the seed layer. The bump comprises the upper side surface, and the lower side surface and side surface. The lower side surface of bump and the part of the side surface contact with the seed layer.
申请公布号 KR20090034713(A) 申请公布日期 2009.04.08
申请号 KR20080058829 申请日期 2008.06.23
申请人 HIMAX TECHNOLOGIES LIMITED 发明人 LIN CHIU SHUN;WU CHIA HUI;TU WEN CHIEH
分类号 H01L23/488 主分类号 H01L23/488
代理机构 代理人
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