Polycyclic resist compositions with increased etch resistance

摘要

The invention relates to a cyclic 2,3-addition polymer obtained from a monomer composition consisting of one or more polycyclic monomers having a pendant aromatic substituent, in combination with a monomer selected from the group consisting of one or more polycyclic monomers having a pendant acid labile substituent. The invention further relates to a photoresist composition comprising a photoacid initiator, an optional dissolution inhibitor, and said cyclic 2,3-addition polymer.