Fin-FET having GAA structure and methods of fabricating the same

摘要

Example embodiments of the present invention relate to a semiconductor device and methods of fabricating the same. Other example embodiments of the present invention relate to a fin-field effect transistor (Fin-FET) having a fin-type channel region and methods of fabricating the same. A Fin-FET having a gate all around (GAA) structure that may use an entire area around a fin as a channel region is provided. The Fin-FET having the GAA structure includes a semiconductor substrate having a body, a pair of support pillars and a fin. The pair of support pillars may protrude from the body. A fin may be spaced apart from the body and may have ends connected to and supported by the pair of support pillars. A gate electrode may surround at least a portion of the fin of the semiconductor substrate. The gate electrode may be insulated from the semiconductor substrate. A gate insulation layer may be interposed between the gate electrode and the fin of the semiconductor substrate.