发明名称 Photoelectric conversion film-stacked type solid-state imaging device
摘要 A solid-state imaging device is provided in which noise caused by fluctuation of potential of a readout pulse is prevented from being superposed on the amount of signal charges even if the potential of the readout pulse fluctuates. The solid-state imaging device includes: a semiconductor substrate having a charge-storage region and a signal readout circuit having a charge coupled element; and a photoelectric conversion film converting incident light into signal charges in accordance with the intensity of the incident light, the signal charges being accumulated in the signal charge-storage region and read out by the signal readout circuit; and a potential barrier unit provided around a connection portion for passing the signal charges through the signal charge-storage region so that the potential barrier unit serves as a potential barrier against charges in the wiring connection portions.
申请公布号 US7515187(B2) 申请公布日期 2009.04.07
申请号 US20050081763 申请日期 2005.03.17
申请人 FUJIFILM CORPORATION 发明人 SUZUKI NOBUO
分类号 H01L27/148;H01L27/146;H04N3/14;H04N5/335;H04N5/341;H04N5/357;H04N5/369;H04N5/372;H04N5/374 主分类号 H01L27/148
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