发明名称 |
Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor |
摘要 |
Embodiments of the invention provide a method for forming tantalum nitride materials on a substrate by employing an atomic layer deposition (ALD) process. The method includes heating a tantalum precursor within an ampoule to a predetermined temperature to form a tantalum precursor gas and sequentially exposing a substrate to the tantalum precursor gas and a nitrogen precursor to form a tantalum nitride material. Thereafter, a nucleation layer and a bulk layer may be deposited on the substrate. In one example, a radical nitrogen compound may be formed from the nitrogen precursor during a plasma-enhanced ALD process. A nitrogen precursor may include nitrogen or ammonia. In another example, a metal-organic tantalum precursor may be used during the deposition process.
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申请公布号 |
US7514358(B2) |
申请公布日期 |
2009.04.07 |
申请号 |
US20050231386 |
申请日期 |
2005.09.21 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
CAO WEI;CHUNG HUA;KU VINCENT;CHEN LING |
分类号 |
H01L21/4763;C23C16/04;C23C16/34;C23C16/44;C23C16/455;H01L21/285;H01L21/31;H01L21/469 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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