发明名称 Method of manufacturing a semiconductor device
摘要 According to the method of manufacturing a semiconductor device, a lead frame is provided wherein the thickness of a tab-side end portion of a silver plating for wire connection formed on each suspending lead 1e is smaller than that of a silver plating formed on each lead. Thereafter, a semiconductor chip is mounted onto a tab. In this case, since the entire surface of the silver plating on the suspending lead 1e is in a crushed state, it is possible to prevent contact of the semiconductor chip with the silver plating when mounting the chip onto the tab. Consequently, in a die bonding process, the semiconductor chip can slide on the tab without contacting the silver plating and thereby making it possible to diminish damage to the semiconductor chip when mounted onto the tab and hence to possibly prevent cracking or chipping of the chip when assembling the semiconductor device.
申请公布号 US7514293(B2) 申请公布日期 2009.04.07
申请号 US20080191503 申请日期 2008.08.14
申请人 RENESAS TECHNOLOGY CORP. 发明人 AMANO KENJI;HASEBE HAJIME
分类号 H01L21/00 主分类号 H01L21/00
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