| 摘要 |
A semiconductor device includes a first wiring layer having a first wiring, a second wiring layer having a second wiring formed over the first wiring layer, and a first insulating layer interposed between the first and second wiring layers, wherein the second wiring layer or an upper layer thereof has a fine projection, and the diameter of a circle circumscribing the projection in a plane or sectional view is 40 nm or less.
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