| 摘要 |
The present invention discloses an organic zinc precursor for depositing an zinc oxide layer on a substrate by metal organic chemical vapor deposition (MOCVD), which is a zinc-ligand complex having the following formula: wherein Y is O or NR7; R1, R2 and R3 independently are H, halogen, C1-8 alkyl, C1-8 haloalkyl, aryl or haloaryl; R4, R5 and R7 independently are C1-8 alkyl, C1-8 haloalkyl, aryl or haloaryl; R6 is H, halogen, C1-8 alkyl or C1-8 haloalkyl.
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