| 摘要 |
A nonvolatile memory device and a method for fabricating the nonvolatile memory device are disclosed. The method comprises forming a device isolation pattern comprising a first opening and a second opening wider than the first opening, wherein the first opening is formed in the second opening; and forming a gate insulating layer on a first portion of an active region of the substrate, wherein the first opening exposes the first portion of the active region of the substrate. The method further comprises forming a first conductive layer in the first and second openings and on the gate insulating layer, partially etching the first conductive layer to form a U-shaped floating gate electrode, forming a gate interlayer insulating layer on the U-shaped floating gate electrode, forming a second conductive layer on the gate interlayer insulating layer and the device isolation pattern, and patterning the second conductive layer.
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