发明名称 Switch elements and a DC/DC converter using the same
摘要 A semiconductor device in which the self-turn-on phenomenon is prevented that can significantly improve power conversion efficiency. The semiconductor device is a system-in-package for power supply applications in which a high-side switch, a low-side switch, and two drivers are included in a single package. The device includes an auxiliary switch disposed between the gate and source of said low-side switch, and a low-side MOSFET 3 for the low-side switch and an auxiliary MOSFET 4 for the auxiliary switch are disposed on the same chip. In this way, the self-turn-on phenomenon can be prevented, allowing the mounting of a low-side MOSFET 3 with a low threshold voltage and thereby significantly improving power conversion efficiency. The gate of the auxiliary MOSFET 4 is driven by the driver for the high-side MOSFET 2, thereby eliminating the need for a new drive circuit and realizing the same pin configuration as existing products, which facilitates easy replacement.
申请公布号 US7514731(B2) 申请公布日期 2009.04.07
申请号 US20050175288 申请日期 2005.07.07
申请人 RENESAS TECHNOLOGY CORP. 发明人 SHIRAISHI MASAKI;IWASAKI TAKAYUKI;MATSUURA NOBUYOSHI
分类号 H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 主分类号 H01L29/76
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