发明名称 |
Methods of forming capacitor structures having aluminum oxide diffusion barriers |
摘要 |
A multilayer electrode structure has a conductive layer including aluminum, an oxide layer formed on the conductive layer, and an oxygen diffusion barrier layer. The oxide layer includes zirconium oxide and/or titanium oxide. The oxygen diffusion barrier layer is formed at an interface between the conductive layer and the oxide layer by re-oxidizing the oxide layer. The oxygen diffusion barrier layer includes aluminum oxide.
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申请公布号 |
US7514315(B2) |
申请公布日期 |
2009.04.07 |
申请号 |
US20070733970 |
申请日期 |
2007.04.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JONG-CHEOL;YOON KYOUNG-RYUL;IM KI-VIN;YEO JAE-HYUN;CHUNG EUN-AE;LEE JIN-IL |
分类号 |
H01L21/8242;H01L21/20 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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