发明名称 Methods of forming capacitor structures having aluminum oxide diffusion barriers
摘要 A multilayer electrode structure has a conductive layer including aluminum, an oxide layer formed on the conductive layer, and an oxygen diffusion barrier layer. The oxide layer includes zirconium oxide and/or titanium oxide. The oxygen diffusion barrier layer is formed at an interface between the conductive layer and the oxide layer by re-oxidizing the oxide layer. The oxygen diffusion barrier layer includes aluminum oxide.
申请公布号 US7514315(B2) 申请公布日期 2009.04.07
申请号 US20070733970 申请日期 2007.04.11
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE JONG-CHEOL;YOON KYOUNG-RYUL;IM KI-VIN;YEO JAE-HYUN;CHUNG EUN-AE;LEE JIN-IL
分类号 H01L21/8242;H01L21/20 主分类号 H01L21/8242
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