发明名称 |
Method of manufacturing a semiconductor device |
摘要 |
Electrical characteristics of a semiconductor device may be enhanced by completely removing a residue such as a polymer formed in a trench when the semiconductor device is manufactured by a method including: forming a via hole and a trench on a semiconductor substrate by an etching process; coating a photoresist on an entire surface of the semiconductor substrate such that the via hole and the trench may be filled thereby; removing a polymer defect in the trench while removing the coated photoresist by a plasma treatment under predetermined process conditions; and performing a wet cleaning process so as to remove a residue of the photoresist.
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申请公布号 |
US7514357(B2) |
申请公布日期 |
2009.04.07 |
申请号 |
US20050293693 |
申请日期 |
2005.12.02 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
JO BO-YEOUN |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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