发明名称 MEMS structure having a stress inverter temperature-compensated resonating member
摘要 A MEMS structure having a temperature-compensated resonating member is described. The MEMS structure comprises a stress inverter member coupled with a substrate. A resonating member is housed in the stress inverter member and is suspended above the substrate. The MEMS stress inverter member is used to alter the thermal coefficient of frequency of the resonating member by inducing a stress on the resonating member in response to a change in temperature.
申请公布号 US7514853(B1) 申请公布日期 2009.04.07
申请号 US20070801774 申请日期 2007.05.10
申请人 SILICON CLOCKS, INC. 发明人 HOWE ROGER T.;QUEVY EMMANUEL P.;BERNSTEIN DAVID H.
分类号 H01L23/34 主分类号 H01L23/34
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