发明名称 Strained semiconductor device and method of making same
摘要 A method of making a semiconductor device is disclosed. A semiconductor body, an STI region, a gate and a silicided source/drain region are provided. The STI area is etched, and a liner is formed at the upper surface.
申请公布号 US7514317(B2) 申请公布日期 2009.04.07
申请号 US20060521804 申请日期 2006.09.15
申请人 INFINEON TECHNOLOGIES AG 发明人 LINDSAY RICHARD
分类号 H01L21/8242 主分类号 H01L21/8242
代理机构 代理人
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