发明名称 |
Semiconductor device |
摘要 |
A semiconductor device such as a DRAM memory device is disclosed. A substrate (12) of semiconductor material is provided with energy band modifying means in the form of a box region (38) and is covered by an insulating layer (14). A semiconductor layer (16) has source (18) and drain (20) regions formed therein to define bodies (22) of respective field effect transistors. The box region (38) is more heavily doped than the adjacent body (22), but less highly doped than the corresponding source (18) and drain (20), and modifies the valence and/or conduction band of the body (22) to increase the amount of electrical charge which can be stored in the body (22).
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申请公布号 |
US7514748(B2) |
申请公布日期 |
2009.04.07 |
申请号 |
US20050226978 |
申请日期 |
2005.09.15 |
申请人 |
INNOVATIVE SILICON ISI SA |
发明人 |
FAZAN PIERRE;OKHONIN SERGUEI |
分类号 |
H01L29/76;H01L21/8242;H01L27/108;H01L27/12;H01L29/739;H01L29/786;H01L29/788 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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