发明名称 Method for manufacturing semiconductor device
摘要 A method for manufacturing a semiconductor device includes preparing a wiring board including a base board having a first surface and a second surface, a wiring pattern having a plurality of electrical connectors and formed on the first surface, a first resist layer having a first opening for exposing the electrical connectors and partially covering the first surface and the wiring pattern, and a second resist layer having a second opening that overlaps with a region where the electrical connectors are formed and partially covering the second surface; preparing a semiconductor chip having a plurality of electrodes; and performing a bonding operation for electrically coupling the plurality of electrical connectors and the plurality of electrodes correspondingly by holding and heating the semiconductor chip with a bonding tool that has a heating mechanism and an end face whose contour is smaller than that of the second opening, aligning the bonding tool in such a way that the end face only overlaps with a region inside the second opening on the second surface, and mounting the semiconductor chip on the first surface of the wiring board.
申请公布号 US7514296(B2) 申请公布日期 2009.04.07
申请号 US20070682498 申请日期 2007.03.06
申请人 SEIKO EPSON CORPORATION 发明人 TAJIMI SHIGEHISA
分类号 H01L21/50;H01L21/44;H01L21/48 主分类号 H01L21/50
代理机构 代理人
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