METHOD OF FORMING PATTERN, COMPOSITION FOR FORMING UPPER-LAYER FILM, AND COMPOSITION FOR FORMING LOWER-LAYER FILM

摘要

A method of pattern formation which is suitable for forming a fine pattern with electron beams (hereinafter abbreviated to EB), X-rays, or extreme ultraviolet (hereinafter abbreviated to EUV). The method comprises the following steps in the following order: (1) a step in which a lower-layer film containing a radiation-sensitive acid generator which generates an acid upon irradiation with a radiation is formed on a substrate and cured; (2) a step in which the lower-layer film is irradiated with a radiation through a mask to selectively generate an acid in those areas of the lower-layer film which are being irradiated with the radiation; (3) a step in which an upper-layer film containing no radiation-sensitive acid generator and comprising a composition which undergoes polymerization or crosslinking by the action of an acid is formed on the lower-layer film; (4) a step in which a polymerized or crosslinked/cured film is formed selectively in those areas of the upper-layer film which correspond to those area of the lower-layer film in which an acid has generated; and (5) a step in which those areas of the upper-layer film which correspond to those areas of the lower-layer film in which no acid has generated are removed.