发明名称 Stacked structures and methods of fabricating stacked structures
摘要 A stacked structure includes a first die coupled to a first substrate and having a first conductive structure formed through the first die. A second die is mounted over the first die. The second die is coupled to the first substrate by the first conductive structure. At least one first support structure formed from a second substrate is provided over the first substrate, adjacent to at least one of the first die and the second die. A top surface of the first support structure is substantially coplanar with a top surface of at least one of the first and second dies adjacent to the first support structure. The stacked structure further includes a heat spreader mounted over the second die.
申请公布号 US7514775(B2) 申请公布日期 2009.04.07
申请号 US20060539814 申请日期 2006.10.09
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 CHAO CLINTON;YUAN TSORNG-DIH;PAN HSIN-YU;CHEN KIM;PENG MARK SHANE;KARTA TJANDRA WINATA
分类号 H01L23/498 主分类号 H01L23/498
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