| 摘要 |
A CMOS image sensor and manufacturing method thereof are provided to form the concavo-convex structure is formed in the formation area of the micro lens and to form uniform micro lens on the total wafer and cell. The photo diode(41) is formed in the semiconductor substrate. The interlayer dielectric layer(42) is formed in the semiconductor substrate. The protective film(43) is formed on the interlayer dielectric layer. The color filter layer(44) is formed on the protective film. The planarization layer(45) is formed on the color filter layer. The micro lens(46) is formed on the planarization layer corresponding to photo diodes. The lattice deterrence(48) is formed between micro lenses.
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