| 摘要 |
A method of manufacturing the substrate processing apparatus and semiconductor device is provided to set up the upper wall and lower wall at both sides of the openings of the gas supply part and to flow the gas of the large amount between substrates. The substrate processing apparatus comprises the process chamber(1), and the gas supply part(4a) and exhaust pipe. The gas supply part is installed within the process chamber according to the laminating direction of the substrate(5). The gas supply part comprises a plurality of openings(9a). The gas supply part supplies the process gas to the horizontal direction about the substrate surface. The upper wall and lower wall are installed at the upper and bottom side of each openings.
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