| 摘要 |
A manufacturing method of a wafer level package is provided to perform the plating process to a desired part selectively by forming metal wiring by an electroless plating process. A manufacturing method of a wafer level package comprises: a first process of patterning a seed layer after forming a semiconductor chip(100) on a wafer(200); and a second process of forming metal wiring by an electroless plating process on the seed layer after semiconductor chips discriminated as a good-die are rearranged and adhered on a wafer ring. The seed layer is formed of materials such as copper and aluminium. |
