| 摘要 |
A plasma processing apparatus and a plasma processing method are provided to reduce the accumulation of a reaction product by forming an icicle gas nozzle on a beam not to disturb the flow of the plasma. A plurality of width spray gas nozzles(27) and a plurality of icicle gas nozzles(28) are fixed in a beam(26) of a microwave plasma processing apparatus(100). The width spray gas nozzle has a spray hole(A). The icicle gas nozzle has the spray hole(B). A first gas supply unit sprays the argon gas around a dielectric(31) from the spray hole. A second gas supply part sprays the silane gas and the hydrogen gas on the location in which the gas is not overly dissociated from the spray hole. Each sprayed gas is made to the plasma by the microwave passing through the dielectric parts. The icicle gas nozzle is positioned not to disturb the flow of the plasma on the substrate. The ion or electron does not collide with the icicle gas nozzle.
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