| 摘要 |
<p>A semiconductor device and a method of manufacture thereof are provided to prevent the holes stored in a body part of SOI device by apply the magnetic field to the magnetic layer formed within the source region of the element isolation film part of the gate lower potion and both sides of gate and drain region. An element isolation film(108) is formed within the silicon layer of the SOI (Silicon On Insulator) substrate having the laminating structure of a filling oxide layer(102) and a silicon layer(104). The lower part of the element isolation film contacts the filling oxide layer. A gate(G) is formed on the active region including the element isolation film. The gate is made of the laminating structure of a gate insulating layer(118), a gate hard mask membrane(122), and a gate conductive film(120). A spacer(126) is formed on the side wall of the gate. A source region and drain region(124) are formed within the silicon layer of both sides of gate. The first magnetic layer(110) is formed within the element isolation film of the lower part of the gate. The second magnetic layer(116) is formed within the source region and the drain region of both sides of the gate.</p> |
