METHOD OF MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR OPTICAL ELEMENT AND METHOD OF MEASURING PHOTOLUMINESCENCE SPECTRUM

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a group III nitride semiconductor optical element having an excellent element characteristics by accurately measuring the intensity of a photoluminescence spectrum.

SOLUTION: A PL spectrum is measured by irradiating a substrate prodcuct E1 with excitation light LEX. The PL spectrum comprises a constituent LOUT2from a GaN semiconductor region 19 and a constituent LOUT1from a GaN semiconductor region 17. The constituent LOUT2comprises a direct constituent L(D)OUT2and a reflection constituent L(R)OUT2which is reflected on the rear face 11b of the non-mirror surface of a substrate 11, and thereby generated. The constituent LOUT1also comprises a direct constituent L(D)OUT1and a reflection constituent L(R)OUT1which is reflected on the rear face of the non-mirror surface of the substrate 11, and thereby generated. A ratio (LOUT2/LOUT1) of a second constitutent LOUT2to a first constitutent LOUT1ratio is created after the measurement of the PL spectrum. The ratio is compared with a predetermined value representing the quality of the second GaN semiconductor region 19. The substrate product E1 is selected based on the comparison result.

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