| 摘要 |
A device isolation film forming method of the semiconductor device is provided to uniformly ossify the first and second SOD films by thermal-treating the linear silicon film and the second SOD films formed on the surface of the trench. The first and second trenches are formed by etching the element isolation region of the semiconductor substrate(100) and a pad oxide film. The width of the first trench is smaller than the width of the second trench. A side wall oxide(108) is formed in the surface of the first and the second trenches. A linear nitride film(110) is formed in the hard mask including the side wall oxide. The first SOD film(112a) is formed in the linear nitride film. A linear silicon film(114a) is formed in the hard mask including the surface of the first and second trenches. The second SOD film(116a) is coated on the linear silicon film in order to reclaim the first and second trenches. An element isolation film(118) which defines the active area of the semiconductor substrate is formed by removing the hard mask.
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