| 摘要 |
This invention relates to a method of producing B2H6 (diborane) in semiconductor wafer processing apparatus. In particular, although not exclusively, this invention relates to producing a dopant gas species containing a desired dopant element, and then producing dopant ions for implanting in semiconductor wafers using an ion implanter. The present invention provides such a method by passing a flow of a boron containing gas such as BF3 over a hydrogen containing solid such as NaH thereby forming an outflow of B2H6.
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