发明名称 IMPROVING PROCESS MODEL ACCURACY BY MODELING MASK CORNER ROUNDING EFFECTS
摘要 An embodiment provides systems and techniques for determining an improved process model which models mask corner rounding (MCR) effects. During operation, the system may receive a mask layout and process data which was generated by applying a photolithography process to the mask layout. The system may also receive an uncalibrated process model which may contain a set of MCR components. Next, the system may identify a set of corners in the mask layout. The system may then modify the mask layout in proximity to the set of corners to obtain a modified mask layout. Alternatively, the system may determine a set of mask layers. Next, the system may determine an improved process model by calibrating the uncalibrated process model using the modified mask layout and/or the set of mask layers, and the process data.
申请公布号 WO2009041987(A1) 申请公布日期 2009.04.02
申请号 WO2007US88957 申请日期 2007.12.27
申请人 SYNOPSYS, INC.;HUANG, JENSHENG;KUO, CHUN-CHIEH;MELVIN, LAWRENCE S., III 发明人 HUANG, JENSHENG;KUO, CHUN-CHIEH;MELVIN, LAWRENCE S., III
分类号 G03F1/14;G03F7/20 主分类号 G03F1/14
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