发明名称 PLASMA PROCESSING APPARATUS AND GAS EXHAUST METHOD
摘要 <p>A plasma processing apparatus is provided for performing plasma processing to a substrate to be processed. The plasma processing apparatus is provided with a processing container (2) which forms an internal space (15); a substrate placing table (3) arranged in the internal space (15) for placing the substrate (W); a processing space forming member (16), which is arranged in the internal space (15), has the inner diameter (a1) smaller than the inner diameter (a15) of the internal space (15), and partitions a processing space (1) above the substrate placing table (3) for performing plasma processing; and an exhaust port (6) arranged between an upper end portion (16a) of the processing space forming member (16) and an inner wall (15a) of the internal space (15) for exhausting gas from the processing space (1).</p>
申请公布号 WO2009041499(A1) 申请公布日期 2009.04.02
申请号 WO2008JP67296 申请日期 2008.09.25
申请人 TOKYO ELECTRON LIMITED;YAMASHITA, JUN 发明人 YAMASHITA, JUN
分类号 H01L21/31;C23C16/455;C23C16/511;H01L21/3065 主分类号 H01L21/31
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