| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent the deterioration of piezoelectric performance caused by the precipitation of a site A ion to improve the durability of a piezoelectric device in the piezoelectric device having a Pb(Ti<SB>x</SB>, Zr<SB>y</SB>, M<SB>z</SB>)O<SB>3</SB>-based piezoelectric film with a perovskite structure. <P>SOLUTION: The piezoelectric device comprises: a substrate; a substrate-side electrode formed on the substrate; the piezoelectric film formed on the substrate-side electrode and having the perovskite-type crystal structure represented by a general formula Pb(Ti<SB>x</SB>, Zr<SB>y</SB>, M<SB>z</SB>)O<SB>3</SB>; and a surface-side electrode formed on the piezoelectric film. A method of driving the piezoelectric device includes a step for applying, to the piezoelectric film for a specified period of time, a reverse electric field with respect to a drive electric field formed at the piezoelectric film by a drive voltage routinely during a drive standby period between a preceeding driving period when a specified drive voltage is applied between the substrate-side electrode and the surface-side electrode to drive the piezoelectric device, and a driving period next to the preceeding driving period. <P>COPYRIGHT: (C)2009,JPO&INPIT |
