| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem wherein an electric field adversely affects the surface, or the like of a semiconductor substrate when a high voltage is applied to high-voltage wiring in a high breakdown-voltage semiconductor device. SOLUTION: A DTI (Deep Trench Isolation) 41 is formed at a semiconductor region at a lower portion of high-voltage wiring 40 to separate a semiconductor region 31A at a lower portion of the high-voltage wiring 40 from its surrounding semiconductor region 31B. As a result, the surface of the semiconductor region 31A separated by the DTI is affected by the electric field caused by a high voltage applied to the high-voltage wiring 40, but the surface of the surrounding semiconductor region 31B is not affected by the electric field. COPYRIGHT: (C)2009,JPO&INPIT
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