| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device having enhanced conversion efficiency to a voltage from an electric charge in an electric charge detecting device, and to provide a method of manufacturing the solid-state imaging device. SOLUTION: The solid-state imaging device is constituted so that it has an electric charge detecting device which stores a signal electric charge and an MOS transistor 22 which provides as an output voltage the signal electric charge stored in the electric charge detecting device in which the electric charge detecting device is connected to the gate electrode 107 of the MOS transistor 22. In this solid-state imaging device, the gate insulating film 106 of the MOS transistor is formed in such a constitution that a film thickness is made thick in each portion adjoining the source and the drain or a portion adjoining the drain as compared to the middle of the gate electrode 107 (t1<t2). COPYRIGHT: (C)2009,JPO&INPIT
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