发明名称 |
Liquid crystal display device and fabricating method thereof |
摘要 |
A thin film transistor substrate and a fabricating method simplify a process and enlarge a capacitance value of a storage capacitor without any reduction of aperture ratio. A transparent first conductive layer and an opaque second conductive layer of a double-layer structured gate line are formed having a step coverage. A pixel electrode is provided on the gate insulating film within a pixel hole of said pixel area passing through the passivation film to be connected to the thin film transistor. A storage capacitor overlaps with the pixel electrode with having the gate insulating film therebetween and has a lower storage electrode protruded from the first conductive layer. |
申请公布号 |
US2009085040(A1) |
申请公布日期 |
2009.04.02 |
申请号 |
US20080292950 |
申请日期 |
2008.12.01 |
申请人 |
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发明人 |
AHN BYUNG CHUL |
分类号 |
G02F1/1368;H01L21/28;G02F1/136;G02F1/1362;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L27/13;H01L29/04;H01L29/786;H01L33/00 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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