发明名称 Liquid crystal display device and fabricating method thereof
摘要 A thin film transistor substrate and a fabricating method simplify a process and enlarge a capacitance value of a storage capacitor without any reduction of aperture ratio. A transparent first conductive layer and an opaque second conductive layer of a double-layer structured gate line are formed having a step coverage. A pixel electrode is provided on the gate insulating film within a pixel hole of said pixel area passing through the passivation film to be connected to the thin film transistor. A storage capacitor overlaps with the pixel electrode with having the gate insulating film therebetween and has a lower storage electrode protruded from the first conductive layer.
申请公布号 US2009085040(A1) 申请公布日期 2009.04.02
申请号 US20080292950 申请日期 2008.12.01
申请人 发明人 AHN BYUNG CHUL
分类号 G02F1/1368;H01L21/28;G02F1/136;G02F1/1362;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L27/13;H01L29/04;H01L29/786;H01L33/00 主分类号 G02F1/1368
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