| 摘要 |
<p>A method for depositing material on a substrate (152, 252, 410) is described. The method comprises directionally depositing a thin film on one or more surfaces (430) of a substrate (152, 252, 410) using a gas cluster ion beam (GCIB) (128A) formed from a source of precursor to the thin film, wherein the deposition occurs on surfaces (430) oriented substantially perpendicular to the direction (442) of incidence of the GCIB (128A), and deposition is substantially avoided on surfaces (432) oriented substantially parallel to the direction (442) of incidence.</p> |
