| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a junction leakage due to silicidation is prevented by suppressing formation of a divot (depression) on an interface between an active region and a device isolation insulating film. SOLUTION: A manufacturing method of the semiconductor device includes a step of removing a second gate insulating film in a region except a region nearby the device isolation insulating film in a first active region, and a second active region, a step of forming a first gate insulating film on the semiconductor substrate after the second gate insulating film is removed, and a step of forming gate electrodes on the first and the second active regions. Consequently, the second gate insulating film is left nearby the device isolation insulating film in the first active region and in the entire second active region, so a divot is not formed or formed in a small size even when formed. COPYRIGHT: (C)2009,JPO&INPIT
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