| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having an ESD protection element having sufficient discharge capability. SOLUTION: Disclosed is the semiconductor device having the ESD protection element on a substrate 130, and the ESD protection element 100 has a p-type well region 101 formed on the substrate 130, an element isolation region 109 formed in the p-type well region 101, an n-type ESD protection transistor 120 formed on an active region 140 enclosed with the element isolation region 109, a p-type guard ring region 106 formed on the p-type well region 101 and enclosing the active region 140 with the element isolation region 109 interposed, and an n-type cathode region 107 formed on the p-type well region 101 and between the active region 140 and p-type guard ring region 106. The element isolation region 109 is formed between the n-type cathode region 107 and active region 140. COPYRIGHT: (C)2009,JPO&INPIT
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