| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor optical element having a mesa-type buried optical waveguide structure for controlling irregular growth of the buried layer of a curving waveguide region while acquiring thickness of the buried layer of a linear waveguide region by easily controlling growth rate of the curving waveguide region and that of the linear waveguide region. SOLUTION: The semiconductor optical element 100 has the buried optical waveguide structure wherein a mesa-type optical waveguide layer is provided on a semiconductor substrate 101 and the optical waveguide layer is buried. The semiconductor optical element 100 is provided with a linear waveguide mesa 110 including the linear optical waveguide layer having a flat plane, the curving waveguide mesa 115 including a curving optical waveguide layer having a flat plane and connected to the linear waveguide mesa 110, a raw material attracting mesa 111 (dummy mesa) formed of a mesa type dummy layer provided almost in parallel adjacent to both sides of the linear waveguide mesa 110 in the plan view, and the buried layer 106 formed between the linear waveguide mesa 110 and the raw material attracting mesa 111. COPYRIGHT: (C)2009,JPO&INPIT
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