| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of improving a regularity and an area efficiency of a cell array. SOLUTION: The semiconductor memory device comprises: a first drive transistor, a first and a third transmission transistor formed on a fist p-type well region; a second drive transistor, a second and a fourth transmission transistor formed in a second p-type well region; a first and a second load transistor formed in an n-type well region Nwell sandwiched between a first and a second p-type well region Pwell 1 and Pwell 2; a first and a second p-type well-potential-supplying region DP5 for supplying a first and a second p-type well potential formed in the first and the second p-type well region; and an n-type well-potential-supplying region DN13 for supplying an n-type well potential formed in the n-type well region. COPYRIGHT: (C)2009,JPO&INPIT
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