PLASMA OXIDATION TREATMENT METHOD, AND METHOD OF FORMING SILICON OXIDE FILM

摘要

PROBLEM TO BE SOLVED: To form silicon oxide films with different thicknesses on a p-type diffusion region and an n-type diffusion region formed on the same silicon layer without need of a complicated process. SOLUTION: Plasma of a treatment gas containing oxygen and Ar oxidizes the p-type diffusion region 103 and the n-type diffusion region 105 at different oxidation rates. A thick film part 107a with a thickness of T1 is formed on the surface of the p-type diffusion region 103, and a thin film part 107b with a thickness of T2 thinner than the thick film part 107a is formed on the surface of the n-type diffusion region 105. COPYRIGHT: (C)2009,JPO&INPIT