| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device with a simple feedback transistor for writing. SOLUTION: The semiconductor memory device is provided with: a latch circuit latching first and second potential levels based on "1" and "0" to a sense node; a first feedback transistor which is connected between a voltage source for writing "1" and a first bit line and has a gate connected to the first sense node; and a second feedback transistor which is connected between a first power source and a second bit line and has a gate connected to the second sense node. The first potential level is set to control the first feedback transistor so that the first bit line is connected to the first power source, and the second potential level is set to control the second feedback transistor so that a write potential between a read potential applied to the bit line in reading data and the potential of the first voltage power source is applied to the second bit line. COPYRIGHT: (C)2009,JPO&INPIT
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