| 摘要 |
Disclosed is a solid-state imaging device includes for each pixel a photoelectric conversion unit, a charge accumulating portion, and a potential barrier provided between the photoelectric conversion unit and the charge accumulating portion, in a thickness direction of a substrate. When light is received, a first charge derived from one of electron-hole pairs generated by photoelectric conversion is accumulated in the photoelectric conversion unit as signal charge, and the potential barrier is modulated by a second charge derived from the other of the electron-hole pairs so that the first charge that has accumulated in the charge accumulating portion is supplied to the photoelectric conversion unit.
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