| 摘要 |
A method for growing an epitaxial layer and devices obtained by that method are disclosed. The method starts by providing a growth substrate having a top surface characterized by a first thermal expansion coefficient (TEC). A mask having a plurality of openings therein is formed on the top surface of the growth substrate. The top surface of the growth substrate is exposed through the openings in the mask. A first epitaxial layer of a first material is grown on the exposed top surface of the openings to form discrete islands of the first material. The discrete islands from adjacent openings in the mask do not contact one another. The first epitaxial layer is characterized by a second TEC. The first and second TECs differ by more than 5 percent. The mask includes a mask material on which the first material will not nucleate.
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