发明名称 ZnO VAPOR DEPOSITION MATERIAL, PROCESS FOR PRODUCING THE SAME, AND ZnO FILM
摘要 A ZnO vapor deposition material for use in the deposition of, e.g., a transparent conductive film. It consists mainly of a porous ZnO sinter which contains one or more first additive elements selected among Ce, La, Y, Pr, Nd, Pm, and Sm and one or more second additive elements selected among Al, Ga, Sc, and B. The content of the first additive elements is higher than that of the second additive elements, and the content of the first additive elements and the content of the second additive elements are in the ranges of 0.1-14.9 mass% and 0.1-10 mass%, respectively. The sinter has a porosity of 3-50%.
申请公布号 WO2009041694(A1) 申请公布日期 2009.04.02
申请号 WO2008JP67685 申请日期 2008.09.29
申请人 MITSUBISHI MATERIALS CORPORATION;MAYUZUMI, YOSHITAKA 发明人 MAYUZUMI, YOSHITAKA
分类号 C23C14/24;C04B35/453;C04B38/02;C04B38/06;C04B38/10;C23C14/34;H01B5/14 主分类号 C23C14/24
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